Control of dislocation structures in LEC single crystal InP
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 48-54
- https://doi.org/10.1016/0022-0248(83)90247-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The identification of faulted prismatic dislocation loops in single crystals of undoped InPJournal of Materials Science, 1981
- The growth and perfection of single crystal indium phosphide produced by the LEC techniqueJournal of Crystal Growth, 1981
- Dislocation clusters in Czochralski-grown single crystal indium phosphideJournal of Crystal Growth, 1981
- The growth of dislocation-free Ge-DOPED InPJournal of Crystal Growth, 1981
- The Detection of Structural Defects in Indium Phosphide by Electrochemical EtchingJournal of the Electrochemical Society, 1981
- Etch features in Czochralski-grown single crystal indium phosphideJournal of Materials Science, 1980
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- Vitreous boron oxide: Drying and moisture absorptionMaterials Research Bulletin, 1971