Recombination constants and α factor in 1.5 μm MQW optical amplifiers taking carrier overflow into account
- 10 September 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (19) , 1774-1776
- https://doi.org/10.1049/el:19921132
Abstract
Recombination constants, carrier lifetime, linewidth enhancement factor and related parameters are examined experimentally and theoretically for MQW semiconductor optical amplifiers. The theoretical model which takes carrier overflow into account predicts a band-to-band recombination constant of B = 10−10 m6/s and an Auger recombination constant of C = 15 × 10−29m6/s which is higher than previously reported for MQW devices. Futhermore linewidth enhancement factors up to 30 are measured.Keywords
This publication has 3 references indexed in Scilit:
- Linewidth broadening of quantum-well-SCH lasers enhanced by carrier fluctuation in optical guiding layersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Picosecond gain dynamics of 1.5-g/spl mu/m multiple quantum well optical amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Carrier lifetime and linewidth enhancement factor measurements from cross-modulation characteristics in semiconductor optical amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990