Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4) , 187-190
- https://doi.org/10.1016/0169-4332(93)90087-r
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wellsJournal of Crystal Growth, 1991
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989