Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 537-542
- https://doi.org/10.1016/0022-0248(91)90517-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substratesJournal of Crystal Growth, 1988
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