Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxy
- 12 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11) , 971-973
- https://doi.org/10.1063/1.100084
Abstract
No abstract availableKeywords
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