Effects of growth temperature on GaN nucleation layers
Open Access
- 5 October 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (15) , 2187-2189
- https://doi.org/10.1063/1.124959
Abstract
The effects of growth temperature on the microscopic structure of GaN nucleation layers were studied in a synchrotron x-ray scattering experiment. As the growth temperature increases from 467 to 655 °C, the stacking of GaN changes from random stacking to a mixture of cubic and hexagonal stacking. With increasing the growth temperature, the order in the atomic layer positions in the out-of-plane direction increases and the mosaic distribution becomes narrow. The optimal photoluminescence spectrum was obtained on the GaN epilayer deposited on the nucleation layer grown at 505 °C.Keywords
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