Homogeneous increase in oxygen concentration in Czochralski silicon crystals by a cusp magnetic field
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (4) , 777-781
- https://doi.org/10.1016/0022-0248(89)90317-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Silicon crystal growth in a cusp magnetic fieldJournal of Crystal Growth, 1989
- Determination of Conversion Factor for Infrared Measurement of Oxygen in SiliconJournal of the Electrochemical Society, 1985
- Czochralski Silicon Crystals Grown in a Transverse Magnetic FieldJournal of the Electrochemical Society, 1985
- Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski MethodJapanese Journal of Applied Physics, 1984
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973