Influence of the series resistance of on-chip power supply buses on internal device failure after ESD stress (MOS devices)
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (11) , 2081-2083
- https://doi.org/10.1109/16.239752
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistorsIEEE Transactions on Electron Devices, 1988