Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN
- 25 February 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (9) , 1413-1415
- https://doi.org/10.1063/1.1556576
Abstract
Field-induced electron transport in an sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Nonequilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.
Keywords
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