Dissociation-width-dependent radiative recombination of electrons and holes at widely split dislocations in silicon

Resolved fine structure on the broad $D5\mathrm{}$ photoluminescence band in silicon—recently associated with straight dislocations—gives evidence that the band is a superposition of at least eleven "line" spectra with systematic energetic positions and reaction-kinetic features. We suggest that the lines originate from the radiative recombination of electrons and holes at Shockley partial dislocations split apart by different widths.