30° Partial Dislocations in Silicon: Absence of Electrically Active States
- 22 November 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 49 (21) , 1569-1572
- https://doi.org/10.1103/physrevlett.49.1569
Abstract
Partial dislocations are the most important intrinsic defects, other than point defects, in controlling the mechanical and electronic properties of silicon. From high-resolution electron-microscopy data, and a simple optimization procedure, a realistic geometry is presented for the 30° partial dislocation. Electronic structure calculations have been performed for this geometry and it has been established that no electrically active states are associated with this dislocation.Keywords
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