Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots

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Abstract
Stacking and polarization control of wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP (100) grown by metalorganic vapor-phase epitaxy is demonstrated. Wavelength control over the 1.55μm region at room temperature is achieved by inserting ultrathin GaAs interlayers underneath the QDs and adjusting the amount of InAs. For widely stacked QDs with a 40nm separation layer, the linear dependence of the emission wavelength on the GaAs interlayer thickness coincides with that of single QD layers revealing the reproduction of identical QD layers. For closely stacked QDs with 4nm separation layer, the emission wavelength as a function of the GaAs interlayer thickness is systematically redshifted and the linewidth is reduced indicating vertical electronic coupling which is proven by the linear polarization of the cleaved-side luminescence changing from in-plane to isotropic.