Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride
- 8 February 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6) , 445-447
- https://doi.org/10.1063/1.99438
Abstract
Silicon nitride films with low defect densities can be prepared by plasma‐enhanced chemical vapor deposition with ammonia‐to‐silane ratios adjusted to obtain N‐rich materials. An electron‐spin‐resonance signal with g value close to 2.002 is reported for such materials, and the defect is identified as a Si atom coordinated to three N atoms as observed earlier in high‐temperature chemical vapor deposited silicon nitride. Densities below 1016 cm−3 are measured for substrate temperatures above 350 °C for the first time. The distribution of defects is uniform through the film thickness. A surface defect density of 1012 cm−2 has also been found in films deposited at 250 °C.Keywords
This publication has 9 references indexed in Scilit:
- Amorphous SiN:H dielectrics with low density of defectsApplied Physics Letters, 1986
- Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH4-NH3-Ar MixtureJapanese Journal of Applied Physics, 1986
- Properties of Hydrogenated Amorphous Si-N Prepared by Various MethodsJapanese Journal of Applied Physics, 1985
- Dangling Bonds in Memory‐Quality Silicon Nitride FilmsJournal of the Electrochemical Society, 1985
- Gap states in silicon nitrideApplied Physics Letters, 1984
- Composition and Structure Control by Source Gas Ratio in LPCVD SiN xJournal of the Electrochemical Society, 1983
- Calculations of the g‐value and linewidth of the esr signal in amorpous silicon nitridePhysica Status Solidi (b), 1982
- Defects in amorphous Si-N films prepared by RF sputteringSolar Energy Materials, 1982
- Electron Spin Resonance in Discharge-Produced Silicon NitrideJapanese Journal of Applied Physics, 1981