Defects in amorphous Si-N films prepared by RF sputtering

This publication has 15 references indexed in Scilit:

• NMR and IR Studies on Hydrogenated Amorphous Si_1-xC_x Films
  Japanese Journal of Applied Physics, 1982
• The Effects of H and F on the ESR Signals in a-Si
  Japanese Journal of Applied Physics, 1982
• Glow Discharge a-Si_1-xC_x: H Films Studied by ESR and IR Measurements
  Japanese Journal of Applied Physics, 1982
• A simple molecular orbital calculation of ESR g-values for amorphous Si1−xCx, Si1−xGex and Ge1−xCx
  Solid State Communications, 1982
• The g-Values of Defects in Amorphous C, Si and Ge
  Japanese Journal of Applied Physics, 1981
• ESR and IR Studies on a-Si_1-xGe_x:H Prepared by Glow Discharge Decomposition
  Japanese Journal of Applied Physics, 1981
• The g-Values of Defects in Amorphous C, Si and Ge
  Japanese Journal of Applied Physics, 1981
• ESR studies on sputtered amorphous SiC, SiGe and GeC films
  Solid State Communications, 1981
• Electron Spin Resonance in Discharge-Produced Silicon Nitride
  Japanese Journal of Applied Physics, 1981
• Reactive Plasma Deposited Si-N Films for MOS-LSI Passivation
  Journal of the Electrochemical Society, 1978