The Effects of H and F on the ESR Signals in a-Si

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Abstract
The effect of hyperfine interaction between a dangling bond and nearby H or F atoms in a-Si is calculated by using a simple molecular orbital method. The isotropic hyperfine structure constant of about 20 G or 43 G is obtained in the case of H or F attachment, respectively, at the nearest neighbor site to the Si atom with a dangling bond. It is considered, by comparing the calculated results with the observed ones, that dangling bonds are located avoiding H or F rich regions in a-Si.