Compound formation between amorphous silicon and chromium
- 1 December 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6424-6425
- https://doi.org/10.1063/1.327592
Abstract
The reaction between evaporated amorphous silicon films and chromium layers was studied using transmission electron microscopy and both transmission electron diffraction and reflection electron diffraction. When a‐Si and Cr films were deposited in the same pumpdown, the formation of CrSi2 was observed at temperatures as low as 400 °C. No reaction was observed when a‐Si was deposited on electrodeposited Cr.This publication has 3 references indexed in Scilit:
- Contact reactions between amorphous silicon and single-crystal metallic filmsThin Solid Films, 1978
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972