Metastability of arsenic antisite-related defects created by electron irradiation in gallium arsenide
- 31 October 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 92 (3) , 207-211
- https://doi.org/10.1016/0038-1098(94)90877-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonancePhysical Review B, 1993
- Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to theEL2 defectPhysical Review B, 1992
- Quenching and recovery characteristics of theEL2 defect in GaAs under monochromatic-light illuminationPhysical Review B, 1989
- The EL2 Defect in GaAs: Some Recent DevelopmentsPhysica Status Solidi (b), 1989
- Temperature dependence of the photoinduced EL2*→EL20 recovery process observed by infrared absorptionApplied Physics Letters, 1989
- Optically induced regeneration of the stable configuration of the EL2 defect in GaAsApplied Physics Letters, 1987
- Energy levels and photo-quenching properties of the arsenic anti-site in GaAsJournal of Physics C: Solid State Physics, 1987
- Recovery Effect of Deep Level Luminescence Induced by Below Band-Gap Excitation in GaAsJapanese Journal of Applied Physics, 1985
- Auger de-excitation of a metastable state in GaAsSolid State Communications, 1979
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978