Energy levels and photo-quenching properties of the arsenic anti-site in GaAs
- 10 June 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (16) , 2445-2451
- https://doi.org/10.1088/0022-3719/20/16/016
Abstract
Optically detected ESR and ENDOR experiments in p-type GaAs under photoexcitation show that an arsenic-anti-site-As-interstitial complex has energy levels Ev+0.52 eV (AsGa+2+/-AsI) and Ev+0.74 eV (AsGa0+/-AsI). From the occupied AsGa0+/-AsI level an absorption band starts peaking at 1.2 eV. From the investigation of the photoquenching behaviour and metastability of the AsGa+-AsI pair is concluded that the diamagnetic AsGa-AsI complex can be associated with EL2.Keywords
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