Photo-Electron Paramagnetic Resonance Study of AsGa Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9A) , L689
- https://doi.org/10.1143/jjap.24.l689
Abstract
The photoresponses of the antisite defect AsGa + electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting that the AsGa antisite and the deep donor EL2 have identical photoionization cross sections and their concentrations exhibit the same dependence on melt stoichiometry. We have also reported the first observation of an extra singlet superimposed on the third component of the AsGa + quadruplet in as-grown GaAs. The photoresponse of the singlet is very different from that of the AsGa + quadruplet.Keywords
This publication has 16 references indexed in Scilit:
- Intracenter Transition in EL2 Observed in Photocurrent SpectrumJapanese Journal of Applied Physics, 1985
- Photoresponse of the AsGa antisite defect in as-grown GaAsApplied Physics Letters, 1985
- Meyer, Spaeth, and Scheffler RespondPhysical Review Letters, 1985
- -Induced Dichroism in GaAsPhysical Review Letters, 1985
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- Auger de-excitation of a metastable state in GaAsSolid State Communications, 1979