DMOS experimental and theoretical study
- 1 January 1975
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XVIII, 122-123
- https://doi.org/10.1109/isscc.1975.1155362
Abstract
An experimental and theoretical investigation of DMOS transistors with widely varying substrate doping and channel lengths has been performed. A simple two-transistor model, which includes velocity saturation was used to give insight into the physics of DMOS devices. A more complete model will be presented.Keywords
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