Nonequilibrium behavior of charged point defects during phosphorus diffusion in silicon
- 15 March 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (6) , 2243-2247
- https://doi.org/10.1063/1.342836
Abstract
A new nonequilibrium kinetic model for phosphorus diffusion in silicon is presented. Concentrations of charged defects and defect-impurity pairs are determined explicitly by solving a system of quasilinear evolution equations, each of a drift-diffusion-reaction form with constant diffusivities. This formulation subsumes a hierarchy of models from the literature. Calculated profiles for a 10-min predeposition show both a tail and a well-defined kink plateau. The latter results directly from the kinetic model under the assumption of a strong bimolecular recombination.This publication has 22 references indexed in Scilit:
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