Theory of cyclotron resonance in Si(100) inversion layers under [001] uniaxial stress
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 442-450
- https://doi.org/10.1016/0039-6028(80)90526-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Stress Effects on Electronic Properties of Silicon Inversion LayersJournal of the Physics Society Japan, 1978
- Many-valley interactions in-type silicon inversion layersPhysical Review B, 1978
- Surface cyclotron resonance in Si under uniaxial stressSolid State Communications, 1976
- Electron-Hole Scattering and the Electrical Resistivity of the SemimetalPhysical Review Letters, 1976
- Cyclotron resonance of electrons in surface space-charge layers on siliconPhysical Review B, 1976
- Mechanical stress influence on effective masses in Si inversion layersSurface Science, 1976
- Observation of Higher Sub-band in-Type (100) Si Inversion LayersPhysical Review Letters, 1975
- Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron GasPhysical Review B, 1961