Many-valley interactions in-type silicon inversion layers
- 15 February 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (4) , 1785-1798
- https://doi.org/10.1103/physrevb.17.1785
Abstract
Correlation effects between different conduction-band valleys have been studied experimentally for electrons in silicon inversion layers. The quantized subband systems were energetically shifted relative to each other by a uniaxial mechanical stress which modifies the conditions favoring intervalley coupling. Transport investigations such as magnetoquantum oscillations, piezoresistance, Hall mobility, and anisotropic conductivity were analyzed with respect to effective masses and relaxation times for (100), (110), and (111) surface orientations. All results are consistent with a domain model on the basis of charge-density waves as a stable ground state. A domain size of the order of 250 nm has been estimated for the (111) surface. The relaxation time has been found to be anisotropic for elliptical subbands.Keywords
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