Electrochemical capacitance-voltage profiling of n-type ZnSe

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Abstract
In this article we report the first detailed study of electrochemical capacitance‐voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n‐type ZnSe during C‐V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C‐V profiler can now be a routine tool for assessing the growth parameters of ZnSe.