Blue stimulated emission from a ZnSe p-n diode at low temperature
- 3 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (5) , 506-508
- https://doi.org/10.1063/1.107869
Abstract
Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n‐type doping and nitrogen from a plasma source for the p‐type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm−3 and n doping of 1×1018 cm−3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm−2 stimulated emission is observed between 448–473 nm with a complicated mode structure.Keywords
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