Model for the Temperature Dependence of the Metastable 2 × 1 Reconstructed Silicon (111) Surface
- 25 September 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 41 (13) , 885-888
- https://doi.org/10.1103/physrevlett.41.885
Abstract
We develop a model based on the idea of dangling-bond-mediated attractive electron-electron interactions to describe the metastably reconstructed 2×1 Si(111) surface and its elimination with increasing annealing temperature. It is found that the resultant picture is able to correlate a considerable amount of experimental data.Keywords
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