The transient response of insulated-gate field-effect transistors
- 1 December 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (12) , 947-956
- https://doi.org/10.1016/0038-1101(65)90159-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of surface traps on characteristics of insulated-gate field-effect transistorsSolid-State Electronics, 1965
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- Theory of the space-charge-limited surface-channel dielectric triodeSolid-State Electronics, 1964
- Theory of Transient Space-Charge-Limited Currents in Solids in the Presence of TrappingPhysical Review B, 1962