Evolution of ion beam damage in solids, and the fractal concept
- 1 January 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 18 (1-6) , 402-406
- https://doi.org/10.1016/s0168-583x(86)80065-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Monte Carlo Simulation Approach to Sputtering in Multi-Component TargetsJapanese Journal of Applied Physics, 1985
- The fractal nature of molecular trajectories in fluidsJournal of Statistical Physics, 1985
- The lateral extension of radiation damage in ion-implanted semiconductorsApplied Physics A, 1983
- The analysis of rutherford scattering-channelling measurements of disorder production and annealing in ion irradiated semiconductorsRadiation Effects, 1983
- Damage profiles for 250-keV self-ion bombardment of Au: Simulations and experimentRadiation Effects, 1982
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- The ordering and disordering of solid solutions under irradiationJournal of Nuclear Materials, 1979
- The influence of ion-implantation-induced stress on the properties of magnetic bubble garnetsThin Solid Films, 1979
- Computer simulation of cascade developments in amorphous targetsRadiation Effects, 1978
- The Energy Dependence of Lattice Disorder in Ion‐Implanted SiliconPhysica Status Solidi (b), 1969