Monte Carlo Simulation Approach to Sputtering in Multi-Component Targets

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Abstract
A Monte Carlo approach based on the use of an analytical approximation formula for the Ziegler-Biersack-Littmark potential to simulate the sputtering processes in multi-component targets is presented. The approach was verified by applying it to TiC and AuCu targets under Ar+-ion bombardment to obtain the escape depth-, energy- and angular-distributions of component atoms sputtered from the targets. The escape depth distribution suggests that most of the sputtered atoms originate from the first and second layers of the surface. The energy- and angular-distributions of component atoms sputtered from TiC and AuCu targets are also presented.