An Alternate Mechanism for Porous Si Photoluminescence: Recombination in SiHx Complexes
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- FTIR studies of H2O and D2O decomposition on porous silicon surfacesPublished by Elsevier ,2002
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy studyJournal of Electron Spectroscopy and Related Phenomena, 1990
- Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical TreatmentsJapanese Journal of Applied Physics, 1990
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Detailed Study of Si-H Stretching Modes in µc-Si: H Film through Second Derivative IR SpectraJapanese Journal of Applied Physics, 1985
- Calculations of the electronic properties of hydrogenated siliconPhysical Review B, 1981
- Infrared Band Assignments in Oxidised Hydrogenated a‐Si FilmsPhysica Status Solidi (b), 1981
- Catenates of the Group IV elements. Correlation of .sigma. electron energiesJournal of the American Chemical Society, 1970