The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy study

This publication has 27 references indexed in Scilit:

• 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
  IEEE Electron Device Letters, 1990
• Ideal hydrogen termination of the Si (111) surface
  Applied Physics Letters, 1990
• Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications
  Thin Solid Films, 1990
• Heterojunction bipolar transistors using Si-Ge alloys
  IEEE Transactions on Electron Devices, 1989
• Silicon-germanium alloys and heterostructures: Optical and electronic properties
  Critical Reviews in Solid State and Materials Sciences, 1989
• Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1989
• Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
  Surface Science, 1988
• Cooperative growth phenomena in silicon/germanium low-temperature epitaxy
  Applied Physics Letters, 1988
• Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
  Applied Physics Letters, 1988
• Comparative study of hydrogen adsorption on Ge(100) and Ge(111) surfaces
  Surface Science, 1984