Dislocation Studies in Bi2Te3 by Etch-Pit Technique
- 1 February 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (2) , 482-490
- https://doi.org/10.1063/1.1709362
Abstract
Dislocation studies in Bi2Te3 were made by etch‐pit technique. All work was done on c planes. The etch marks the dislocations in the c plane by producing etch grooves, and marks the sites of emergence of dislocations from the surface with pyramidal etch pits. Evidence was found for the presence of networks of dislocations lying predominantly in the c plane. Experimental evidence was also found for bending of the dislocations within the crystal being responsible for different size pyramidal etch pits, and flat bottom pits observed on the etched surfaces. The same mechanism was found to be responsible for bringing out new etch pits on longer etching. The slip traces on the c plane were found by controlled surface‐damage studies to be parallel to the binary axes.This publication has 13 references indexed in Scilit:
- Direct observation of interacting dislocation loops from different sources in Bi2Te3Physics Letters, 1966
- Surface damage on abraded silicon specimensPhilosophical Magazine, 1963
- Dislocation nets in bismuth and antimony telluridesPhilosophical Magazine, 1960
- Anisotropic diffusion of copper into bismuth tellurideJournal of Physics and Chemistry of Solids, 1960
- Galvanomagnetic Effects in n-Type Bismuth TellurideProceedings of the Physical Society, 1958
- XXV. The direct observation of dislocation nets in rock salt single crystalsPhilosophical Magazine, 1956
- Dislocation densities in intersecting lineage boundaries in germaniumActa Metallurgica, 1955
- Dislocations in low-angle boundaries in germaniumActa Metallurgica, 1955
- Etchpits and dislocations along grain boundaries, sliplines and polygonization wallsActa Metallurgica, 1954
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953