Wavelength dependence of the emission of a double-heterojunction GaAs-AlGaAs injection laser in a strong magnetic field

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Abstract
The emission energy of continuously operated double‐heterostructure GaAs‐AlGaAs lasers has been measured in magnetic fields up to 15 T and temperatures of 4.2 and 50 K. For lasers with a p‐active region the observed shift in the emission energy can be described by a change in the position of the quasi‐Fermi level of the conduction band as a function of the magnetic field. The measurements provide a determination of the carrier density at threshold and verify the assumption that the matrix element for the optical transition is in first order independent of the applied magnetic field.