On the Theory of Radiative Recombination in High Magnetic Field in Semiconductors
- 1 January 1965
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 8 (3) , 805-812
- https://doi.org/10.1002/pssb.19650080319
Abstract
The effect of a high magnetic field on the recombination between the conduction band and an acceptor is examined. It is found that at magnetic field which corresponds to the “quantum limit” for the conduction band but gives no “deformation” of the acceptor states, the transition matrix element does not depend on the magnetic field. The assumptions for the magnetic field are fulfilled for the case of laser radiation in a magnetic field. It may be said that on the basis of the hydrogen‐like model, the field dependence of the threshold current must be determined by the change in the density of states.Keywords
This publication has 19 references indexed in Scilit:
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- FREQUENCY TUNING OF GaAs LASER DIODE BY UNIAXIAL STRESSApplied Physics Letters, 1963
- EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODESApplied Physics Letters, 1963
- THE EFFECT OF Cu IMPURITIES ON INFRARED ELECTROLUMINESCENCE IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- MAGNETICALLY TUNABLE cw InAs DIODE MASERApplied Physics Letters, 1963
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962