Acoustoelectric measurements of minority and majority carrier mobilities in semiconductors including Hg1−x Cd x Te
- 1 August 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (2) , 119-124
- https://doi.org/10.1007/bf02565198
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of the SiSiO2 interface by surface inversion currentsSolid-State Electronics, 1986
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980
- Acoustoelectric Mobility Measurements on Films with Negligible Acoustic LossPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Nondestructive Evaluation of Si Wafers Using SAWPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Surface mobility measurement using acoustic surface wavesApplied Physics Letters, 1973
- Surface Mobility on Silicon from Acoustoelectric Current MeasurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Linear and Nonlinear Attenuation of Acoustic Surface Waves in a Piezoelectric Coated with a Semiconducting FilmJournal of Applied Physics, 1970
- Pulsed Ultrasonic Studies of the Acoustoelectric Effect, Ultrasonic Attenuation, and Trapping in CdSPhysical Review B, 1969
- Ultrasonic Attenuation by Free Carriers in GermaniumPhysical Review B, 1957
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955