Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/NonmagneticJunctions
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- 29 January 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 88 (6) , 066603
- https://doi.org/10.1103/physrevlett.88.066603
Abstract
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a junction, so that there is no spin injection (or extraction) at low bias.
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