Theory of spin-polarized transport in inhomogeneous magnetic semiconductors

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Abstract
Theory of spin-polarized bipolar transport in inhomogeneously doped magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. It is shown that spin can be injected/extracted into/from the nonmagnetic region only at high bias. A giant magnetoresistance and spinvoltaic effects are predicted if nonequilibrium spin is injected into the junction.

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