A Piezoresistive Silicon Accelerometer With Monolithically Integrated CMOS-circuitry
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 597-600
- https://doi.org/10.1109/sensor.1995.717295
Abstract
A piezoresistive silicon accelerometer with complete on-chip signal conditioning for automotive applications was developed. The sensor is a three- layer device fabricated and bonded completely on a wafer scale. The functional units of the electronic circuit include amplification, temperature drift compensation, and an auto-zero offset compensation capability for the complete device. The results indicate that the sensor fabrication is compatible with a CMOS process and that it has the potential for a low-cost high yield process.Keywords
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