The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 215-220
- https://doi.org/10.1016/0022-0248(91)90459-i
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The role of MOVPE in the manufacture of high performance InP based optoelectronic devicesJournal of Crystal Growth, 1988
- A TEM study of GaInAsP/InP heterojunctions grown by atmospheric pressure MOVPEMaterials Letters, 1986
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984