The role of MOVPE in the manufacture of high performance InP based optoelectronic devices
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 792-802
- https://doi.org/10.1016/0022-0248(88)90621-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxyApplied Physics Letters, 1986
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- Chemical beam epitaxial growth of extremely high quality InGaAs on InPApplied Physics Letters, 1986
- 2 Gbit/s and 2.4 Gbit/s optical transmission field trial over a 32 km installed routeElectronics Letters, 1986
- High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPEElectronics Letters, 1985
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- Future 1.55-µm undersea lightwave systemsJournal of Lightwave Technology, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984