Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001)
- 1 June 1995
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 10 (6) , 1516-1522
- https://doi.org/10.1557/jmr.1995.1516
Abstract
Tin oxide (SnO2) thin films were deposited on sapphire (0001) substrate by metal-organic chemical vapor deposition (MOCVD) at temperatures of 600 and 700 °C. The microstructure of the deposited films was characterized by x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). At the growth conditions studied, films were single-phase rutile and epitaxial, but showed variant structures. Three distinct in-plane epitaxial relationships were observed between the films and the substrate. A crystallographic model is proposed to explain the film morphology. This model can successfully predict the ratio of the width to the length of an averaged grain size based upon the lattice mismatch of the film-substrate interface.Keywords
This publication has 13 references indexed in Scilit:
- Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVDJournal of Materials Research, 1993
- Thin film electroceramicsApplied Surface Science, 1993
- Structural properties of epitaxial TiO2 films grown on sapphire (11$\overline 1$0) by MOCVDJournal of Materials Research, 1992
- Integration of ferroelectric thin films into nonvolatile memoriesJournal of Vacuum Science & Technology A, 1992
- Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel ReportJournal of Materials Research, 1990
- AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor depositionJournal of Applied Physics, 1987
- Structural and electron diffraction data for sapphire (α‐al2o3)Journal of Electron Microscopy Technique, 1985
- Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Electrical and Optical Properties of GaSe-SnO2HeterojunctionsJapanese Journal of Applied Physics, 1976
- Tin Oxide Thin Film TransistorsJapanese Journal of Applied Physics, 1970