Interband transitions of thin-layer GaAs/AlAs superlattices
- 15 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (6) , 3254-3258
- https://doi.org/10.1103/physrevb.36.3254
Abstract
Spectroscopic ellipsometry has been used to study the confinement and interlayer coupling effects on the optical interband transitions of (GaAs(AlAs superlattices. For superlattice periods d≥50 Å the confinement effect on the transition becomes negligible, whereas on the transition it is still appreciable. For thinner periods, a splitting of the transition, related to interlayer coupling, is observed. The results are compared with photoluminescence measurements. A linear muffin-tin-orbital calculation of the electronic structure of the m=1 superlattice enables us to assign the splitting of the transition to the appearance of two critical points in the Λ direction as a result of the strong interaction between the folded bands.
Keywords
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