Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition
- 1 October 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (7) , 2691-2695
- https://doi.org/10.1063/1.335905
Abstract
Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric‐pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin‐layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight‐binding calculation.This publication has 14 references indexed in Scilit:
- Monolayer heterointerfaces and thin layers (∼10 Å) in Al x Ga 1−x As-GaAs superlattices grown by metalorganic chemical vapour depositionElectronics Letters, 1984
- Study of Characteristics of AC Arc Discharges on Polluted Insulator SurfacesJapanese Journal of Applied Physics, 1982
- Electronic band structure of (001) GaAs-AlAs superlatticesSolid State Communications, 1982
- Effective-mass theory of semiconductor heterojunctions and superlatticesSurface Science, 1982
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength RegionJapanese Journal of Applied Physics, 1981
- Effect of High Pressure on the Order-Disorder Transition in CuPtJapanese Journal of Applied Physics, 1981
- Similarity of (Ga, Al, As) alloys and ultrathin heterostructures: Electronic properties from the empirical pseudopotential methodPhysical Review B, 1980
- Electronic properties of the AlAs-GaAs (001) interface and superlatticePhysical Review B, 1979
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Infrared Reflection Spectra ofMixed CrystalsPhysical Review B, 1970