Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs.
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On the factors impairing the compositional transition abruptness in heterojunctions grown by vapour-phase epitaxyJournal of Crystal Growth, 1987
- Atomic layer epitaxyJournal of Applied Physics, 1986
- Diffusivity and Thermal Cracking Rate of Metalorganic Gases by ChromatographyJournal of the Electrochemical Society, 1985