On the factors impairing the compositional transition abruptness in heterojunctions grown by vapour-phase epitaxy
- 1 August 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 84 (2) , 271-288
- https://doi.org/10.1016/0022-0248(87)90142-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Parametric analysis of control parameters in MOCVDJournal of Crystal Growth, 1986
- Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactorJournal of Crystal Growth, 1986
- New approach to growth of abrupt heterojunctions by MOVPEElectronics Letters, 1984
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Compositional transients in MOCVD grown III–V heterostructuresJournal of Crystal Growth, 1984
- Mechanism of graphite baffle gettering in organometallic vapor phase epitaxy; Adsorption of trimethylaluminum on graphiteJournal of Electronic Materials, 1983
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981