Parametric analysis of control parameters in MOCVD
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 210-218
- https://doi.org/10.1016/0022-0248(86)90303-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence: Single Heterojunction and Inadvertent Quantum WellsJapanese Journal of Applied Physics, 1984
- Evidence for transient composition variations at GaAs/Ga1−xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour depositionJournal of Electronic Materials, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Compositional transients in MOCVD grown III–V heterostructuresJournal of Crystal Growth, 1984