Evidence for transient composition variations at GaAs/Ga1−xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour deposition
- 1 November 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (6) , 969-988
- https://doi.org/10.1007/bf02655311
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982
- I n s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlatticeJournal of Applied Physics, 1980
- Preparation and properties of GaAs layers for novel f.e.t. structuresElectronics Letters, 1979
- Interface studies of AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1979
- Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold currentElectronics Letters, 1979
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971