Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence: Single Heterojunction and Inadvertent Quantum Wells

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Abstract
Photoluminescence (PL) was used to detect rapid alloy compositional fluctuations which were found in (Al, Ga)As/GaAs heterostructures grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). PL data are employed to estimate the thickness and aluminum composition of the resulting inadvertent quantum well. A way to eliminate these artifacts was found. Using the improved growth procedures, modulation-doped heterostructures showing two-dimensional electron-gas behavior were then achieved.