Electron paramagnetic resonance of titanium Ti3+(3d1) in GaAs
- 1 January 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (1) , 65-67
- https://doi.org/10.1088/0268-1242/2/1/010
Abstract
Electron paramagnetic resonance experiments performed at 3.5 K on titanium-doped GaAs are reported. An isotropic spectrum characterised by g=1.9361+or-0.0005 and a linewidth of 16.5 mT is attributed to Ti3+ (3d1) substitutional to gallium.Keywords
This publication has 7 references indexed in Scilit:
- Properties of titanium in InPJournal of Physics C: Solid State Physics, 1986
- Optical studies of GaAs:TiJournal of Physics C: Solid State Physics, 1986
- Titanium-doped semi-insulating InP grown by the liquid encapsulated Czochralski methodApplied Physics Letters, 1986
- Absorption spectra of Ti-doped GaAsPhysical Review B, 1986
- New semi-insulating InP: Titanium midgap donorsApplied Physics Letters, 1986
- An electron paramagnetic resonance study of vanadium-doped InP compensated by electron irradiationJournal of Physics C: Solid State Physics, 1985
- An electron-paramagnetic-resonance study of the dynamic Jahn-Teller effect for Sc2+ in ZnSPhysics Letters A, 1973