Optical studies of GaAs:Ti
- 20 August 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (23) , L525-L529
- https://doi.org/10.1088/0022-3719/19/23/004
Abstract
In LEC-grown n-GaAs:Ti, a triple-peaked absorption band at 0.66 eV and a band at 1.01 eV are observed and interpreted as the 3A2 to 3T1(F) and to 3T1(P) transitions of TiGa2+. Sharp zero-phonon lines are seen in absorption at 0.566 and 0.569 eV, the former line also being observed as the zero-phonon component of a photoluminescence band. The absence of any Zeeman splitting of the lines up to fields of 10 T indicates that these lines do not arise from TiGa2+.Keywords
This publication has 2 references indexed in Scilit:
- Transition-metal impurities in III-V compoundsJournal of Physics C: Solid State Physics, 1985
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962